Aiming at the performance problems of photodetectors in optical communication, remote sensing and infrared thermal imaging, the research progress of photodetectors in the near-infrared band at home and abroad was discussed. Compared with traditional compound semiconductor materials, new materials such as silicon-based, graphene, tellurium compounds, transition metal dihalogenated compounds and perovskites have unique structures and properties, and are important materials for the preparation of low-power and high-performance photodetectors. This paper mainly expounds the research progress of silicon-based near-infrared photodetectors based on PN and PiN heterojunction structures, introduces the research progress of near-infrared photodetectors based on two-dimensional materials (graphene, tellurium compounds, transition metal dihalogenated compounds) and perovskite materials, and analyzes and compares the performance parameters of related near-infrared photodetectors, which provides ideas for the subsequent research of high-performance near-infrared photodetectors.