As a key and foundational component for modern electronic devices, the multilayer ceramic capacitors with excellent temperature stability are desirable for the next generation of high-temperature capacitors. Herein, authors fabricated Nd-doped BaTiO 3 -(Bi 1/2 Na 1/2 )TiO 3 dielectric ceramics with Electronic Industries Association specification of X9R by solid-state reaction process. It is shown that the 0.9BT-0.1BNT exhibits a homogeneous solid solution with the ferroelectric domain structure. With an increase in the Nd concentration and temperature, the tetragonality decreases while the peak of dielectric permittivity curve becomes more broaden and stable. In particular, Nb-doped 0.9BT-0.1BNT samples imply a typical core-shell structure with nano-sized domain in the core to increase the dielectric constant. In addition, 0.9BT-0.1BNT-2.0Nb ceramic demonstrates the dielectric constant of 1 800 and dielectric loss of 2.0% from －55 ℃ to 200 ℃. This work not only provides a promising candidate material, but also provides an attractive method to design new family of high-performance dielectric ceramics for high temperature MLCCs applications.